Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures
文献类型:期刊论文
作者 | Du GX ; Babu MR ; Han XF ; Deng JJ ; Wang WZ ; Zhao JH ; Wang WD ; Tang JK |
刊名 | journal of applied physics
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出版日期 | 2009 |
卷号 | 105期号:7页码:art. no. 07c707 |
关键词 | SPIN INJECTION TRILAYER STRUCTURES HETEROSTRUCTURES (GA JUNCTIONS MN)AS |
ISSN号 | 0021-8979 |
通讯作者 | han xf chinese acad sci inst phys beijing natl lab condensed matter phys state key lab magnetism pob 603 beijing 100080 peoples r china. e-mail address: xfhan@aphy.iphy.ac.cn ; jhzhao@red.semi.ac.cn |
中文摘要 | tunneling magnetoresistance (tmr) in ga(0.9)2mn(0.08)as/al-o/co40fe40b20 trilayer hybrid structure as a function of temperature from 10 to 50 k with magnetic field vertical bar h vertical bar <= 2000 oe has been studied. tmr ratio of 1.6% at low fields at 10 k was achieved with the applied current of 1 mu a. the behavior of junction resistance was well explained by the tunneling resistance across the barrier. strong bias dependences of magnetoresistance and junction resistance were presented. (c) 2009 american institute of physics. [doi 10.1063/1.3068418] |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/7119] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Du GX,Babu MR,Han XF,et al. Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures[J]. journal of applied physics,2009,105(7):art. no. 07c707. |
APA | Du GX.,Babu MR.,Han XF.,Deng JJ.,Wang WZ.,...&Tang JK.(2009).Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures.journal of applied physics,105(7),art. no. 07c707. |
MLA | Du GX,et al."Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures".journal of applied physics 105.7(2009):art. no. 07c707. |
入库方式: OAI收割
来源:半导体研究所
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