Observation of the surface circular photogalvanic effect in InN films
文献类型：期刊论文
| 作者 | Zhang Z ; Zhang R ; Xie ZL ; Liu B ; Li M ; Fu DY ; Fang HN ; Xiu XQ ; Lu H ; Zheng YD ; Chen YH ; Tang CG ; Wang ZG |
| 刊名 | solid state communications
 |
| 出版日期 | 2009 |
| 卷号 | 149期号:25-26页码:1004-1007 |
| 关键词 | InN Surface charge accumulation layer Spin-dependent current Spin splitting |
| ISSN号 | 0038-1098 |
| 通讯作者 | zhang r nanjing univ key lab adv photon & elect mat nanjing 210093 peoples r china. e-mail address: rzhang@nju.edu.cn |
| 中文摘要 | a sizable spin-dependent photocurrent related to the interband transition in inn films is observed. the surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. the homogeneous photocurrent demonstrates the existence of spin splitting in the inn surface layer, and the structure inversion asymmetry (sia)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. crown copyright (c) 2009 published by elsevier ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | special funds for major state basic research 2006cb604905 national nature science foundation of china 60721063 608201060036073116062860776001research fund for the doctoral program of higher education of china 20050284004 973 projects 2006cb604908 2006cb921607 this work is supported by special funds for major state basic research project 973 (2006cb604905), hi-tech researchproject, national nature science foundation of china (60721063, 60820106003, 60731160628, 60776001), and the research fund for the doctoral program of higher education of china (20050284004). chen is grateful for the support from the 973 projects (2006cb604908, 2006cb921607). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7129]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang Z,Zhang R,Xie ZL,et al. Observation of the surface circular photogalvanic effect in InN films[J]. solid state communications,2009,149(25-26):1004-1007. |
| APA | Zhang Z.,Zhang R.,Xie ZL.,Liu B.,Li M.,...&Wang ZG.(2009).Observation of the surface circular photogalvanic effect in InN films.solid state communications,149(25-26),1004-1007. |
| MLA | Zhang Z,et al."Observation of the surface circular photogalvanic effect in InN films".solid state communications 149.25-26(2009):1004-1007. |
入库方式： OAI收割
来源：半导体研究所
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