High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber
文献类型：期刊论文
| 作者 | Pan SD ; Zhao LN ; Yuan Y ; Zhu SN ; He JL ; Wang YG |
| 刊名 | optical materials
 |
| 出版日期 | 2009 |
| 卷号 | 31期号:8页码:1215-1217 |
| 关键词 | Semiconductor saturable absorber Q-switch Mode lock Nd:GdVO4 |
| ISSN号 | 0925-3467 |
| 通讯作者 | pan sd nanjing univ natl lab solid state microstruct nanjing 210093 peoples r china. e-mail address: psd66zx@163.com |
| 中文摘要 | the generation of passively q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped nd gdvo4 laser with a low temperature in0.25ga0.75as saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. the repetition rate and pulse duration of the mode-locked pulses concentrated in the q-switch envelop were 455 mhz and 12 ps, respectively. the average output power was 1.8 w and the slope efficiency was 36%. (c) 2009 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | china postdoctoral science foundation 20070420997 this work was supported by china postdoctoral science foundation funded project (20070420997). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7131]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan SD,Zhao LN,Yuan Y,et al. High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber[J]. optical materials,2009,31(8):1215-1217. |
| APA | Pan SD,Zhao LN,Yuan Y,Zhu SN,He JL,&Wang YG.(2009).High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber.optical materials,31(8),1215-1217. |
| MLA | Pan SD,et al."High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber".optical materials 31.8(2009):1215-1217. |
入库方式： OAI收割
来源：半导体研究所
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