The bipolar doping of ZnS via native defects and external dopants
文献类型：期刊论文
| 作者 | Li JB
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 105期号:11页码:art. no. 113704 |
| 关键词 | AUGMENTED-WAVE METHOD P-TYPE ZNO POINT-DEFECTS II-VI NITROGEN SEMICONDUCTORS 1ST-PRINCIPLES COMPENSATION ENHANCEMENT |
| ISSN号 | 0021-8979 |
| 通讯作者 | gai yq chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. e-mail address: jbli@semi.ac.cn |
| 中文摘要 | by employing first-principle total-energy calculations, a systematic study of the dopability of zns to be both n- and p-types compared with that of zno is carried out. we find that all the attempted acceptor dopants, group v substituting on the s lattice site and group i and ib on the zn sites in zns, have lower ionization energies than the corresponding ones in zno. this can be accounted for by the fact that zns has relative higher valence band maximum than zno. native zns is weak p-type under s-rich condition, as the abundant acceptor v-zn has rather large ionization energy. self-compensations by the formation of interstitial donors in group i and ib-doped p-type zns can be avoided when sample is prepared under s-rich condition. in terms of ionization energies, li-zn and n-s are the preferred acceptors in zns. native n- type doping of zns is limited by the spontaneous formation of intrinsic v-zn(2-); high efficient n-type doping with dopants is harder to achieve than in zno because of the readiness of forming native compensating centers and higher ionization energy of donors in zns. (c) 2009 american institute of physics. [doi 10.1063/1.3103585] |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | "one-hundred talents plan" of the chinese academy of sciences national natural science foundation of china 60325416 6052100190301007j.l. gratefully acknowledges financial support from the "one-hundred talents plan" of the chinese academy of sciences. this work was supported by the national natural science foundation of china under grant nos. 60325416, 60521001, and 90301007. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7135]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li JB. The bipolar doping of ZnS via native defects and external dopants[J]. journal of applied physics,2009,105(11):art. no. 113704. |
| APA | Li JB.(2009).The bipolar doping of ZnS via native defects and external dopants.journal of applied physics,105(11),art. no. 113704. |
| MLA | Li JB."The bipolar doping of ZnS via native defects and external dopants".journal of applied physics 105.11(2009):art. no. 113704. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。