Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wei QX ; Ren ZW ; He ZH ; Niu ZC |
| 刊名 | chinese optics letters
 |
| 出版日期 | 2009 |
| 卷号 | 7期号:1页码:52-55 |
| 关键词 | 1.3 MU-M ROOM-TEMPERATURE OPTICAL-PROPERTIES CAP LAYER GAAS DEPOSITION |
| ISSN号 | 1671-7694 |
| 通讯作者 | wei qx shanxi univ dept phys taiyuan 030006 peoples r china. e-mail address: qx.wei@163.com |
| 中文摘要 | evolution of surface morphology and optical characteristics of 1.3-mu m in0.5ga0.5as/gaas quantum dots (qds) grown by molecular beam epitaxy (mbe) are investigated by atomic force microscopy (afm) and photoluminescence (pl). after deposition of 16 monolayers (ml) of in0.5ga0.5as, qds are formed and elongated along the [110] direction when using sub-ml depositions, while large size ingaas qds with better uniformity are formed when using ml or super-ml depositions. it is also found that the larger size qds show enhanced pl efficiency without optical nonlinearity, which is in contrast to the elongated qds. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 10734060 national basic research program of china 2006cb921504 this work was supported by the national natural science foundation of china (no. 10734060) and the national basic research program of china (no. 2006cb921504). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7137]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei QX,Ren ZW,He ZH,et al. Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy[J]. chinese optics letters,2009,7(1):52-55. |
| APA | Wei QX,Ren ZW,He ZH,&Niu ZC.(2009).Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy.chinese optics letters,7(1),52-55. |
| MLA | Wei QX,et al."Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy".chinese optics letters 7.1(2009):52-55. |
入库方式： OAI收割
来源：半导体研究所
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