中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals

文献类型:期刊论文

作者Wang HL ; Xing MX ; Ren G ; Zheng WH
刊名journal of vacuum science & technology b
出版日期2009
卷号27期号:3页码:1093-1096
关键词III-V semiconductors indium compounds photonic crystals plasma materials processing semiconductor lasers sputter etching
ISSN号1071-1023
通讯作者zheng wh chinese acad sci inst semicond nanooptoelect lab beijing 100083 peoples r china. e-mail address: whzheng@red.semi.ac.cn
中文摘要the authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in inp. the etching was performed at 70 degrees c using bcl3/cl-2 chemistries. a high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. the process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments.
学科主题光电子学
收录类别SCI
资助信息national programs of china 10634080 60677046608380032006cb921700 this work was supported by national programs of china (grant nos. 10634080, 60677046, 60838003, and 2006cb921700).
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7141]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang HL,Xing MX,Ren G,et al. Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals[J]. journal of vacuum science & technology b,2009,27(3):1093-1096.
APA Wang HL,Xing MX,Ren G,&Zheng WH.(2009).Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals.journal of vacuum science & technology b,27(3),1093-1096.
MLA Wang HL,et al."Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals".journal of vacuum science & technology b 27.3(2009):1093-1096.

入库方式: OAI收割

来源:半导体研究所

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