Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Song HP ; Wei HY; Zhang B
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:22页码:art. no. 222114 |
| 关键词 | conduction bands III-V semiconductors indium compounds semiconductor heterojunctions semiconductor materials valence bands X-ray photoelectron spectra |
| ISSN号 | 0003-6951 |
| 通讯作者 | song hp chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: songhp@semi.ac.cn ; xlliu@semi.ac.cn |
| 中文摘要 | in2o3 is a promising partner of inn to form inn/in2o3 heterosystems. the valence band offset (vbo) of wurtzite inn/cubic in2o3 heterojunction is determined by x-ray photoemission spectroscopy. the valence band of in2o3 is found to be 1.47 +/- 0.11 ev below that of inn, and a type-i heterojunction with a conduction band offset (cbo) of 0.49-0.99 ev is found. the accurate determination of the vbo and cbo is important for use of inn/in2o3 based electronic devices. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7147]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Song HP,Wei HY,Zhang B. Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy[J]. applied physics letters,2009,94(22):art. no. 222114. |
| APA | Song HP,Wei HY,&Zhang B.(2009).Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy.applied physics letters,94(22),art. no. 222114. |
| MLA | Song HP,et al."Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy".applied physics letters 94.22(2009):art. no. 222114. |
入库方式： OAI收割
来源：半导体研究所
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