Fine structural splitting and exciton spin relaxation in single InAs quantum dots
文献类型：期刊论文
| 作者 | Dou XM ; Sun BQ ; Xiong YH ; Niu ZC ; Ni HQ ; Xu ZY |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 105期号:10页码:art. no. 103516 |
| 关键词 | deformation excitons fine structure III-V semiconductors indium compounds phonons photoluminescence semiconductor quantum dots spin dynamics |
| ISSN号 | 0021-8979 |
| 通讯作者 | dou xm cas sklsm inst semicond pob 912 beijing 100083 peoples r china. e-mail address: bqsun@semi.ac.cn |
| 中文摘要 | we have studied the exciton spin dynamics in single inas quantum dots (qds) with different exciton fine structural splitting (fss) by transient luminescence measurements. we have established the correlation between exciton spin relaxation rate and the energy splitting of the fss when fss is nonzero and found that the spin relaxation rate in qd increases with a slope of 8.8x10(-4) ns(-1) mu ev(-1). theoretical analyses based on the phonon-assisted relaxations via the deformation potential give a reasonable interpretation of the experimental results. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china 2007cb924904 chinese academy of sciences kicx2.yw.w09-1 this work is supported partly by the national basic research program of china under grant no. 2007cb924904 and the knowledge innovation program project of chinese academy of sciences under grant no. kicx2.yw.w09-1. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7155]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Dou XM,Sun BQ,Xiong YH,et al. Fine structural splitting and exciton spin relaxation in single InAs quantum dots[J]. journal of applied physics,2009,105(10):art. no. 103516. |
| APA | Dou XM,Sun BQ,Xiong YH,Niu ZC,Ni HQ,&Xu ZY.(2009).Fine structural splitting and exciton spin relaxation in single InAs quantum dots.journal of applied physics,105(10),art. no. 103516. |
| MLA | Dou XM,et al."Fine structural splitting and exciton spin relaxation in single InAs quantum dots".journal of applied physics 105.10(2009):art. no. 103516. |
入库方式： OAI收割
来源：半导体研究所
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