Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding
文献类型：期刊论文
| 作者 | Wang Y ; Pan JQ
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:6页码:art. no. 064211 |
| 关键词 | CHEMICAL VAPOR-DEPOSITION WAVE-GUIDE CIRCUIT DOUBLE HETEROSTRUCTURES SILICON SUBSTRATE CW OPERATION WAFER DEVICES FILMS |
| ISSN号 | 0256-307x |
| 通讯作者 | chen t peking univ state key lab mesoscop phys beijing 100871 peoples r china. e-mail address: rangz@pku.edu.cn ; qingg@pku.edu.cn |
| 中文摘要 | a pulsed ingaasp-si hybrid laser is fabricated using metal bonding. a novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an ingaasp multi-quantum well distributed feedback structure. when electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 ka/cm(2) and a slope efficiency of 0.02 w/a. the 1542 nm laser output exits mainly from the si waveguide. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 10874001 507320011067401260877022national basic research program of china 2007cb613402 supported by the national natural science foundation of china under grant nos 10874001, 50732001, 10674012 and 60877022, and the national basic research program of china under grant no 2007cb613402. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7169]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Y,Pan JQ. Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding[J]. chinese physics letters,2009,26(6):art. no. 064211. |
| APA | Wang Y,&Pan JQ.(2009).Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding.chinese physics letters,26(6),art. no. 064211. |
| MLA | Wang Y,et al."Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding".chinese physics letters 26.6(2009):art. no. 064211. |
入库方式： OAI收割
来源：半导体研究所
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