GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:6页码:art. no. 067801 |
| 关键词 | MU-M LASER ISLANDS |
| ISSN号 | 0256-307x |
| 通讯作者 | wang pf chinese acad sci inst semicond state key lab superlattice & microstruct beijing 100083 peoples r china. e-mail address: pfwang@semi.ac.cn |
| 中文摘要 | a bilayer stacked inas/gaas quantum dot structure grown by molecular beam epitaxy on an in0.05ga0.95as metamorphic buffer is investigated. by introducing a ingaas sb cover layer on the upper inas quantum dots (qds) layers, the emission wavelength of the qds is extended successfully to 1.533 mu m at room temperature, and the density of the qds is in the range of 4 x 10(9) -8 x 10(9) cm(-2). strong photoluminescence (pl) intensity with a full width at half maximum of 28.6 mev of the pl spectrum shows good optical quality of the bilayer qds. the growth of bilayer qds on metamorphic buffers offers a useful way to extend the wavelengths of gaas-based materials for potential applications in optoelectronic and quantum functional devices. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60625405 10734060national basic research program of china 2006cb921504 supported by the national natural science foundation of china under grant nos 60625405 and 10734060, and the national basic research program of china under grant no 2006cb921504. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7171]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy[J]. chinese physics letters,2009,26(6):art. no. 067801. |
| APA | Xu YQ.(2009).GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy.chinese physics letters,26(6),art. no. 067801. |
| MLA | Xu YQ."GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy".chinese physics letters 26.6(2009):art. no. 067801. |
入库方式： OAI收割
来源：半导体研究所
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