Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Don XM ; Sun BQ ; Huang SS ; Ni HQ ; Niu ZC ; Yang FH ; Jia R |
| 刊名 | chinese physics b
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:6页码:2258-2263 |
| 关键词 | biexcition binding energy single quantum dots exciton molecular model Heitler-London method |
| ISSN号 | 1674-1056 |
| 通讯作者 | sun bq chinese acad sci inst semicond sklsm beijing 100083 peoples r china. e-mail address: bqsun@semi.ac.cn |
| 中文摘要 | this paper studies the size dependence of biexciton binding energy in single quantum dots (qds) by using atomic force microscopy and micro-photoluminescence measurements. it finds that the biexciton binding energies in the qds show "binding" and "antibinding" properties which correspond to the large and small sizes of qds, respectively. the experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the heitler-london method. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundations of china o69c041001 2007cb924904 project supported by the national natural science foundations of china (grant nos o69c041001 and 2007cb924904). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7175]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Don XM,Sun BQ,Huang SS,et al. Size dependence of biexciton binding energy in single InAs/GaAs quantum dots[J]. chinese physics b,2009,18(6):2258-2263. |
| APA | Don XM.,Sun BQ.,Huang SS.,Ni HQ.,Niu ZC.,...&Jia R.(2009).Size dependence of biexciton binding energy in single InAs/GaAs quantum dots.chinese physics b,18(6),2258-2263. |
| MLA | Don XM,et al."Size dependence of biexciton binding energy in single InAs/GaAs quantum dots".chinese physics b 18.6(2009):2258-2263. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。