Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm
文献类型：期刊论文
| 作者 | Xue CL
|
| 刊名 | chinese physics b
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:6页码:2542-2544 |
| ISSN号 | 1674-1056 |
| 关键词 | Si-based Ge epitaxy photodetector |
| 通讯作者 | xue hy chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china. e-mail address: cbw@semi.ac.cn |
| 中文摘要 | high quality ge was epitaxially grown on si using ultrahigh vacuum/chemical vapor deposition (uhv/cvd). this paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m ge, with responsivities as high as 0.38 and 0.21 a/w at 1.31 and 1.55 mu m, respectively. the dark current density is 0.37 ma/cm(2) and 29.4 ma/cm(2) at 0 v and a reverse bias of 0.5 v. the detector with a diameter of 30 mu m, a 3 db-bandwidth of 4.72 ghz at an incident wavelength of 1550 nm and zero external bias has been measured. at a reverse bias of 3 v, the bandwidth is 6.28 ghz. |
| 学科主题 | 光电子学 |
| 资助信息 | national high-technology research and development program of china 2006aa03z415 major state basic program of china 2007cb613404 national natural science foundation of china 60676005 project supported by the national high-technology research and development program of china (grant no 2006aa03z415), the major state basic program of china (grant no 2007cb613404), and the national natural science foundation of china (grant no 60676005). |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7179]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xue CL. Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm[J]. chinese physics b,2009,18(6):2542-2544. |
| APA | Xue CL.(2009).Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm.chinese physics b,18(6),2542-2544. |
| MLA | Xue CL."Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm".chinese physics b 18.6(2009):2542-2544. |
入库方式： OAI收割
来源：半导体研究所
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