Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors
文献类型：期刊论文
| 作者 | Li JB
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:21页码:art. no. 212109 |
| 关键词 | ab initio calculations band structure cadmium compounds III-V semiconductors II-VI semiconductors IV-VI semiconductors zinc compounds |
| ISSN号 | 0003-6951 |
| 通讯作者 | li yh fudan univ dept phys shanghai 200433 peoples r china. e-mail address: a.walsh@ucl.ac.uk ; swei@nrel.gov |
| 中文摘要 | using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group iv, iii-v, and ii-vi semiconductor compounds, taking into account the deformation potential of the core states. this revised approach removes assumptions regarding the reference level volume deformation and offers a more reliable prediction of the "natural" unstrained offsets. comparison is made to experimental work, where a noticeable improvement is found compared to previous methodologies. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | u.s. department of energy (doe) de-ac36-08go28308 national science foundation of china special funds for major state basic research the work at nrel is funded by the u.s. department of energy (doe), under contract no. de-ac36-08go28308. the work at fudan university is partially supported by the national science foundation of china and the special funds for major state basic research. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7181]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li JB. Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors[J]. applied physics letters,2009,94(21):art. no. 212109. |
| APA | Li JB.(2009).Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors.applied physics letters,94(21),art. no. 212109. |
| MLA | Li JB."Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors".applied physics letters 94.21(2009):art. no. 212109. |
入库方式： OAI收割
来源：半导体研究所
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