中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Spin-Hall effect in the generalized honeycomb lattice with Rashba spin-orbit interaction

文献类型:期刊论文

作者Liu GC ; Wang ZG ; Li SS
刊名physics letters a
出版日期2009
卷号373期号:23-24页码:2091-2096
关键词Graphene Spin-Hall effect Topology
ISSN号0375-9601
通讯作者liu gc chinese acad sci state key lab superlattices & microstruct inst semicond pob 912 beijing 100083 peoples r china. e-mail address: guocailiu@semi.ac.cn
中文摘要we study the spin-hall effect in a generalized honeycomb lattice, which is described by a tight-binding hamiltonian including the rashba spin-orbit coupling and inversion-symmetry breaking terms brought about by a uniaxial pressure. the calculated spin-hall conductance displays a series of exact or approximate plateaus for isotropic or anisotropic hopping integral parameters, respectively. we show that these plateaus are a consequence of the various fermi-surface topologies when tuning epsilon(f). for the isotropic case, a consistent two-band analysis, as well as a berry-phase interpretation. are also given. (c) 2009 elsevier b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
资助信息national basic research program of china (973 program) g2009cb929300 national natural science foundation of china 60821061 60776061this work was supported by the national basic research program of china (973 program) grant no. g2009cb929300 and the national natural science foundation of china under grant nos. 60821061 and 60776061.
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7183]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liu GC,Wang ZG,Li SS. Spin-Hall effect in the generalized honeycomb lattice with Rashba spin-orbit interaction[J]. physics letters a,2009,373(23-24):2091-2096.
APA Liu GC,Wang ZG,&Li SS.(2009).Spin-Hall effect in the generalized honeycomb lattice with Rashba spin-orbit interaction.physics letters a,373(23-24),2091-2096.
MLA Liu GC,et al."Spin-Hall effect in the generalized honeycomb lattice with Rashba spin-orbit interaction".physics letters a 373.23-24(2009):2091-2096.

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来源:半导体研究所

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