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Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

文献类型:期刊论文

作者You JB; Zhang XW; Fan YM; Tan HR
刊名chinese physics letters
出版日期2009
卷号26期号:5页码:art. no. 056801
关键词BN THIN-FILMS REFRACTIVE-INDEX ELLIPSOMETRY NUCLEATION DIAMOND DENSITY
ISSN号0256-307x
通讯作者zhang xw chinese acad sci inst semicond key lab semicond mat sci beijing 100083 peoples r china. e-mail address: xwzhang@semi.ac.cn
中文摘要cubic boron nitride (c-bn) films were deposited on si(001) substrates in an ion beam assisted deposition (ibad) system under various conditions, and the growth parameter spaces and optical properties of c-bn films have been investigated systematically. the results indicate that suitable ion bombardment is necessary for the growth of c-bn films, and a well defined parameter space can be established by using the p/a-parameter. the refractive index of bn films keeps a constant of 1.8 for the c-bn content lower than 50%, while for c-bn films with higher cubic phase the refractive index increases with the c-bn content from 1.8 at chi(c) = 50% to 2.1 at chi(c) = 90%. furthermore, the relationship between n and rho for bn films can be described by the anderson-schreiber equation, and the overlap field parameter gamma is determined to be 2.05.
学科主题半导体材料
收录类别SCI
资助信息national natural science foundation of china 50601025 supported by the national natural science foundation of china under grant no 50601025.
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7213]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
You JB,Zhang XW,Fan YM,et al. Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)[J]. chinese physics letters,2009,26(5):art. no. 056801.
APA You JB,Zhang XW,Fan YM,&Tan HR.(2009).Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001).chinese physics letters,26(5),art. no. 056801.
MLA You JB,et al."Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)".chinese physics letters 26.5(2009):art. no. 056801.

入库方式: OAI收割

来源:半导体研究所

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