Hole Spin Relaxation in an Ultrathin InAs Monolayer
文献类型：期刊论文
| 作者 | Zhang XH
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:5页码:art. no. 057303 |
| 关键词 | SEMICONDUCTOR QUANTUM DOTS GAAS WELLS DYNAMICS EXCITONS |
| ISSN号 | 0256-307x |
| 通讯作者 | li t chinese acad sci inst semicond state key lab superlattices & microstruct beijing 100083 peoples r china. e-mail address: xinhuiz@semi.ac.cn |
| 中文摘要 | we investigate the spin relaxation time of holes in an ultrathin neutral inas monolayer (1.5 ml) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (trpl) experiments. with excitation energies above the gaas gap, we observe a rather slow relaxation of holes (tau(1h) = 196 +/- 17 ps) that is in the magnitude similar to electrons (tau(1e) = 354 +/- 32 ps) in this ultrathin sample. the results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 10674131 60625405national basic research program of china 2007cb924904 knowledge innovation project of chinese academy of sciences kjcx2.yw.w09 hundred talents program of chinese academy of sciences supported by the national natural science foundation of china under grant nos 10674131 and 60625405, the national basic research program of china under grant no 2007cb924904, the knowledge innovation project of chinese academy of sciences under grant no kjcx2.yw.w09, and the hundred talents program of chinese academy of sciences. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7215]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang XH. Hole Spin Relaxation in an Ultrathin InAs Monolayer[J]. chinese physics letters,2009,26(5):art. no. 057303. |
| APA | Zhang XH.(2009).Hole Spin Relaxation in an Ultrathin InAs Monolayer.chinese physics letters,26(5),art. no. 057303. |
| MLA | Zhang XH."Hole Spin Relaxation in an Ultrathin InAs Monolayer".chinese physics letters 26.5(2009):art. no. 057303. |
入库方式： OAI收割
来源：半导体研究所
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