Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Jin P ; Wei HY; Song HP
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:16页码:art. no. 163301 |
| 关键词 | conduction bands III-V semiconductors II-VI semiconductors indium compounds interface states polarisation semiconductor heterojunctions valence bands wide band gap semiconductors X-ray photoelectron spectra zinc compounds |
| ISSN号 | 0003-6951 |
| 通讯作者 | yang al chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: alyang@semi.ac.cn ; xlliu@semi.ac.cn |
| 中文摘要 | the valence band offsets of the wurtzite polar c-plane and nonpolar a-plane inn/zno heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 ev and 2.20 +/- 0.2 ev. the heterojunctions form in the type-i straddling configuration with a conduction band offsets of 0.84 +/- 0.2 ev and 0.40 +/- 0.2 ev. the difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. our results show important face dependence for inn/zno heterojunctions, and the valence band offset of a-plane heterojunction is more close to the "intrinsic" valence band offset. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | 863 high technology r&d program of china 2007aa03z402 2007aa03z451 major state basic research project of china 2006cb604907 national science foundation of china 60506002 60776015the authors are grateful to professor huanhua wang and dr. tieying yang of the institute of high energy physics, chinese academy of science. this work was supported by the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z451) ,the special funds for major state basic research project of china (973 program) (grant no. 2006cb604907), and the national science foundation of china (grant nos. 60506002 and 60776015). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7227]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P,Wei HY,Song HP. Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy[J]. applied physics letters,2009,94(16):art. no. 163301. |
| APA | Jin P,Wei HY,&Song HP.(2009).Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy.applied physics letters,94(16),art. no. 163301. |
| MLA | Jin P,et al."Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy".applied physics letters 94.16(2009):art. no. 163301. |
入库方式： OAI收割
来源：半导体研究所
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