Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
文献类型：期刊论文
| 作者 | Zhao H ; Wang SM ; Zhao QX ; Sadeghi M ; Larsson A |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2009 |
| 卷号 | 311期号:7页码:1723-1727 |
| 关键词 | Quantum well Dilute nitride Rapid thermal annealing InGaAs GaInNAs |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhao h chalmers photon lab dept microtechnol & nanosci se-41296 gothenburg sweden. e-mail address: zhaohuan@red.semi.ac.cn |
| 中文摘要 | we propose an innovative technique, making use of the in segregation effect, referred as the n irradiation method, to enhance in-n bonding and extend the emission wavelength of gainnas quantum wells (qws). after the formation of a complete in floating layer, the growth is interrupted and n irradiation is initiated. the majority of n atoms are forced to bond with in atoms and their incorporation is regulated independently by the n exposure time and the as pressure. the effect of the n exposure time and as pressure on the n incorporation and the optical quality of gainnas qws were investigated. anomalous photoluminescence (pl) wavelength red shifts after rapid thermal annealing (rta) were observed in the n-irradiated samples, whereas a normal gainnas sample revealed a blue shift. this method provides an alternative way to extend the emission wavelength of gainnas qws with decent optical quality. we demonstrate light emission at 1546 nm from an 11-nm-thick qw, using this method and the pl intensity is similar to that of a 7-nm-thick gainnas qw grown at a reduced rate. (c) 2008 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | swedish foundation for strategic research (ssf) swedish agency for international development cooperation (sida) this work was supported by the swedish foundation for strategic research (ssf) and the swedish agency for international development cooperation (sida). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7231]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao H,Wang SM,Zhao QX,et al. Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method[J]. journal of crystal growth,2009,311(7):1723-1727. |
| APA | Zhao H,Wang SM,Zhao QX,Sadeghi M,&Larsson A.(2009).Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method.journal of crystal growth,311(7),1723-1727. |
| MLA | Zhao H,et al."Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method".journal of crystal growth 311.7(2009):1723-1727. |
入库方式： OAI收割
来源：半导体研究所
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