Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN
文献类型：期刊论文
| 作者 | Hao GD
|
| 刊名 | japanese journal of applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 48期号:4页码:art. no. 041001 |
| 关键词 | CONTINUOUS-WAVE OPERATION QUANTUM-WELLS LASER-DIODES ORIENTATION SEMICONDUCTORS DEPENDENCE ANISOTROPY SEMIPOLAR SAPPHIRE FILMS |
| ISSN号 | 0021-4922 |
| 通讯作者 | hao gd chinese acad sci inst semicond key lab semicond mat sci box 912 beijing 100083 peoples r china. e-mail address: gdhao@semi.ac.cn |
| 中文摘要 | using the effective-mass hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the transition energies and optical properties in the r-plane ([1012]-oriented plane) gan. the results show that (1) the transition energies decrease with the biaxial strains changing from -0.5 to 0.5%; and (2) giant optical anisotropy appears in the r-plane which is significantly affected by the biaxial strains. we clarify the relation between the strains and the polarization properties. finally, we discuss the application of these properties to the r-plane gan based devices. (c) 2009 the japan society of applied physics |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | 973 program 2006cb604908 2006cb921607 national natural science foundation of china 60625402 the work was supported by the 973 program (2006cb604908 and 2006cb921607), and the national natural science foundation of china (60625402). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7235]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao GD. Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN[J]. japanese journal of applied physics,2009,48(4):art. no. 041001. |
| APA | Hao GD.(2009).Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN.japanese journal of applied physics,48(4),art. no. 041001. |
| MLA | Hao GD."Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN".japanese journal of applied physics 48.4(2009):art. no. 041001. |
入库方式： OAI收割
来源：半导体研究所
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