1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth
文献类型：期刊论文
| 作者 | Zhao H ; Haglund A ; Westburgh P ; Wang SM ; Gustavsson JS ; Sadeghi M ; Larsson A |
| 刊名 | electronics letters
 |
| 出版日期 | 2009 |
| 卷号 | 45期号:7页码:356-u23 |
| 关键词 | THRESHOLD-CURRENT-DENSITY RANGE |
| ISSN号 | 0013-5194 |
| 通讯作者 | zhao h chalmers dept microtechnol & nanosci photon lab se-41296 gothenburg sweden. e-mail address: zhaoh@chalmers.se |
| 中文摘要 | the emission wavelength of a gainnas quantum well (qw) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of qw composition and thickness and n concentration in the barriers. a triple qw design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth. high speed, ridge waveguide lasers fabricated from high quality material grown by molecular beam epitaxy exhibited a damped modulation response with a bandwidth of 13 ghz. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | swedish foundation for strategic research (ssf) swedish agency for international development cooperation (sida) this work was supported by the swedish foundation for strategic research (ssf) and the swedish agency for international development cooperation (sida). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7239]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao H,Haglund A,Westburgh P,et al. 1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth[J]. electronics letters,2009,45(7):356-u23. |
| APA | Zhao H.,Haglund A.,Westburgh P.,Wang SM.,Gustavsson JS.,...&Larsson A.(2009).1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth.electronics letters,45(7),356-u23. |
| MLA | Zhao H,et al."1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth".electronics letters 45.7(2009):356-u23. |
入库方式： OAI收割
来源：半导体研究所
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