Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers
文献类型：期刊论文
| 作者 | Ding Y ; Fan WJ ; Xu DW ; Tong CZ ; Yoon SF ; Zhang DH ; Zhao LJ ; Wang W ; Liu Y ; Zhu NH |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 42期号:8页码:art. no. 085117 |
| 关键词 | SPEED SEMICONDUCTOR-LASERS SINGLE-MODE VCSELS TRANSMISSION PERFORMANCE RATIO |
| ISSN号 | 0022-3727 |
| 通讯作者 | ding y nanyang technol univ sch elect & elect engn singapore 639798 singapore. e-mail address: yding@ntu.edu.sg |
| 中文摘要 | we present the fabrication of 1.3 mu m waveband p-doped inas quantum dot (qd) vertical cavity surface emitting lasers (vcsels) with an extremely simple process. the continuous-wave saturated output power of 1.1 mw with a lasing wavelength of 1280 nm is obtained at room temperature. the high-speed modulation characteristics of p-doped qd vcsels of two different oxide aperture sizes are investigated and compared. the maximum 3 db modulation bandwidth of 2.5 ghz can be achieved at a bias current of 7 ma for a p-doped qd vcsel with an oxide aperture size of 10 mu m in the small signal frequency response measurements. the crucial factors for the 3 db bandwidth limitation are discussed according to the parameters' extraction from frequency response. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | a*star singapore-poland bilateral program, serc 0621200015 the authors acknowledge the financial support from the a*star singapore-poland bilateral program, serc grant no 0621200015.the authors would like to thank associate professor l f wang, ms j bian of the chinese academy of sciences for their technical support and mr z h liu of nanyang technological university for useful discussions. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7247]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ding Y,Fan WJ,Xu DW,et al. Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers[J]. journal of physics d-applied physics,2009,42(8):art. no. 085117. |
| APA | Ding Y.,Fan WJ.,Xu DW.,Tong CZ.,Yoon SF.,...&Zhu NH.(2009).Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers.journal of physics d-applied physics,42(8),art. no. 085117. |
| MLA | Ding Y,et al."Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers".journal of physics d-applied physics 42.8(2009):art. no. 085117. |
入库方式： OAI收割
来源：半导体研究所
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