中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation

文献类型:期刊论文

作者Zhang XH; Chen L
刊名applied physics letters
出版日期2009
卷号94期号:14页码:art. no. 142109
关键词Curie temperature ferromagnetic materials gallium compounds Kerr magneto-optical effect magnetic relaxation magnetic thin films manganese compounds semimagnetic semiconductors spin dynamics time resolved spectra
ISSN号0003-6951
通讯作者zhang xh chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. e-mail address: xinhuiz@semi.ac.cn
中文摘要spin dynamics in (ga,mn)as films grown on gaas(001) was investigated by time-resolved magneto-optical kerr effect. the kerr signal decay time of (ga,mn)as without external magnetic field applied was found to be several hundreds picoseconds, which suggested that photogenerated polarized holes and magnetic ions are coupled as a ferromagnetic system. nonmonotonic temperature dependence of relaxation and dephasing (r&d) time and larmor frequency manifests that bir-aronov-pikus mechanism dominates the spin r&d time at low temperature, while d'yakonov-perel mechanism dominates the spin r&d time at high temperature, and the crossover between the two regimes is curie temperature.
学科主题半导体物理
收录类别SCI
资助信息national natural science foundation of china 1067 4130 60836002national key projects for basic research of china 2007cb924904 chinese academy of sciences kjcx2. yw. w09 the authors are grateful to professor baoquan sun for technical assistance and fruitful discussion. this work is supported by the national natural science foundation of china (rant nos. 1067 4130 and 60836002), the national key projects for basic research of china under grant no. 2007cb924904, and the knowledge innovation project of chinese academy of sciences (rant no. kjcx2. yw. w09).
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7251]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Zhang XH,Chen L. Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation[J]. applied physics letters,2009,94(14):art. no. 142109.
APA Zhang XH,&Chen L.(2009).Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation.applied physics letters,94(14),art. no. 142109.
MLA Zhang XH,et al."Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation".applied physics letters 94.14(2009):art. no. 142109.

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来源:半导体研究所

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