Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation
文献类型:期刊论文
作者 | Zhang XH![]() ![]() |
刊名 | applied physics letters
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出版日期 | 2009 |
卷号 | 94期号:14页码:art. no. 142109 |
关键词 | Curie temperature ferromagnetic materials gallium compounds Kerr magneto-optical effect magnetic relaxation magnetic thin films manganese compounds semimagnetic semiconductors spin dynamics time resolved spectra |
ISSN号 | 0003-6951 |
通讯作者 | zhang xh chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. e-mail address: xinhuiz@semi.ac.cn |
中文摘要 | spin dynamics in (ga,mn)as films grown on gaas(001) was investigated by time-resolved magneto-optical kerr effect. the kerr signal decay time of (ga,mn)as without external magnetic field applied was found to be several hundreds picoseconds, which suggested that photogenerated polarized holes and magnetic ions are coupled as a ferromagnetic system. nonmonotonic temperature dependence of relaxation and dephasing (r&d) time and larmor frequency manifests that bir-aronov-pikus mechanism dominates the spin r&d time at low temperature, while d'yakonov-perel mechanism dominates the spin r&d time at high temperature, and the crossover between the two regimes is curie temperature. |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | national natural science foundation of china 1067 4130 60836002national key projects for basic research of china 2007cb924904 chinese academy of sciences kjcx2. yw. w09 the authors are grateful to professor baoquan sun for technical assistance and fruitful discussion. this work is supported by the national natural science foundation of china (rant nos. 1067 4130 and 60836002), the national key projects for basic research of china under grant no. 2007cb924904, and the knowledge innovation project of chinese academy of sciences (rant no. kjcx2. yw. w09). |
语种 | 英语 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/7251] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhang XH,Chen L. Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation[J]. applied physics letters,2009,94(14):art. no. 142109. |
APA | Zhang XH,&Chen L.(2009).Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation.applied physics letters,94(14),art. no. 142109. |
MLA | Zhang XH,et al."Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation".applied physics letters 94.14(2009):art. no. 142109. |
入库方式: OAI收割
来源:半导体研究所
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