Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation
文献类型：期刊论文
| 作者 | Wei XC ; Duan RF; Ding K
|
| 刊名 | japanese journal of applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 48期号:2页码:art. no. 021001 |
| 关键词 | LOCALIZATION SEMICONDUCTORS EMISSION BOXES BAND |
| ISSN号 | 0021-4922 |
| 通讯作者 | ding k chinese acad sci key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: dingkai@red.semi.ac.cn |
| 中文摘要 | ingan/gan multiple quantum wells grown by metal-organic chemical vapor deposition were irradiated with the electron beam from a low energy accelerator. the electron irradiation induced a redshift by 50 mev in the photoluminescence spectra of the electron-irradiated ingan/gan quantum wells, irrespective of the exposure time to the electron beam which ranges from 10 to 1000s. the localization parameter extracted from the temperature-dependent photoluminescence spectra was found to increase in the irradiated samples. analysis of the intensity of the longitudinal optical phonon sidebands showed the enhancement of the exciton-phonon coupling, indicating that the excitons are more strongly localized in the irradiated ingan wells. the change in the pholotuminescence spectra. in the irradiated inga/gan quantum wells were explained in terms of the increase of indium concentration in indium rich clusters induced by the electron irradiation (c) 2009 the japan society of applied physics |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7261]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei XC,Duan RF,Ding K. Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation[J]. japanese journal of applied physics,2009,48(2):art. no. 021001. |
| APA | Wei XC,Duan RF,&Ding K.(2009).Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation.japanese journal of applied physics,48(2),art. no. 021001. |
| MLA | Wei XC,et al."Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation".japanese journal of applied physics 48.2(2009):art. no. 021001. |
入库方式： OAI收割
来源：半导体研究所
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