Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage
文献类型：期刊论文
| 作者 | Liu P ; He Y ; Zhou JP ; Mu CH ; Zhang HW |
| 刊名 | physica status solidi a-applications and materials science
 |
| 出版日期 | 2009 |
| 卷号 | 206期号:3页码:562-566 |
| 关键词 | COPPER-TITANATE GRAIN-BOUNDARY BEHAVIOR |
| ISSN号 | 1862-6300 |
| 通讯作者 | liu p shaanxi normal univ sch phys & informat technol xian 710062 peoples r china. e-mail address: liupeng@snnu.edu.cn ; zhoujp@snnu.edu.cn ; hwzhang@uestc.edu.cn |
| 中文摘要 | cacu3ti(4-x)nb(x)o(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. the ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with nb doping. two debye-type relaxations were observed for the nb-doped samples at low frequency and high frequency, respectively. the complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. the low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. the shift voltage v-b corresponding to the minimal capacitance increased with increase of the composition x. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 50872078 50772065foundation for innovative research groups of the nsfc 60721001 this work was supported by the national natural science foundation of china (grant nos. 50872078 and 50772065) and the foundation for innovative research groups of the nsfc (grant no. 60721001). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7269]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu P,He Y,Zhou JP,et al. Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage[J]. physica status solidi a-applications and materials science,2009,206(3):562-566. |
| APA | Liu P,He Y,Zhou JP,Mu CH,&Zhang HW.(2009).Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage.physica status solidi a-applications and materials science,206(3),562-566. |
| MLA | Liu P,et al."Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage".physica status solidi a-applications and materials science 206.3(2009):562-566. |
入库方式： OAI收割
来源：半导体研究所
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