Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers
文献类型:期刊论文
作者 | Ma WQ![]() ![]() ![]() |
刊名 | acta physica sinica
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出版日期 | 2009 |
卷号 | 58期号:3页码:1896-1900 |
关键词 | maximum modal gain p-doped InAs/GaAs quantum dot laser |
ISSN号 | 1000-3290 |
通讯作者 | ji hm chinese acad sci inst semicond nanooptoelect lab beijing 100083 peoples r china. e-mail address: tyang@semi.ac.cn |
中文摘要 | we report an experimental and theoretical study of maximum modal gain of p-doped 1.3 mu m inas/gaas quantum dot (qd) lasers. the maximum modal gain of the qd laser with five stacks of qds is as high as 17.5 cm(-1) which is the same as that of the undoped laser with identical structures. the expression of the maximum modal gain is derived and it is indicated that p-doping has no effect to the maximum modal gain. we theoretically calculated the maximum modal gain of the qd lasers and the result is in a good agreement with the experimental data. furthermore, qds with lower height or smaller aspect ratio are beneficial to achieving a greater maximum modal gain that leads to lower threshold current density and higher differential modal gain, which is good for the application of p-doped 1.3 mu m inas/gaas qd lasers in optical communications systems. |
学科主题 | 光电子学 |
收录类别 | SCI |
资助信息 | national high technology research and development program of china 2006aa03z401 cas national natural science foundation of china 60776043 60706008project supported by the national high technology research and development program of china (grant no. 2006aa03z401), one-hundred talents program' of cas and the national natural science foundation of china (grant nos. 60776043, 60706008). |
语种 | 中文 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/7281] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Ma WQ,Yang T,Cao YL. Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers[J]. acta physica sinica,2009,58(3):1896-1900. |
APA | Ma WQ,Yang T,&Cao YL.(2009).Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers.acta physica sinica,58(3),1896-1900. |
MLA | Ma WQ,et al."Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers".acta physica sinica 58.3(2009):1896-1900. |
入库方式: OAI收割
来源:半导体研究所
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