中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dislocation core effect scattering in a quasitriangle potential well

文献类型:期刊论文

作者Wei HY
刊名applied physics letters
出版日期2009
卷号94期号:11页码:art. no. 112102
关键词aluminium compounds carrier density carrier mobility dislocation density dislocation scattering gallium compounds III-V semiconductors semiconductor heterojunctions wide band gap semiconductors
ISSN号0003-6951
通讯作者xu xq chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: xlliu@red.semi.ac.cn ; qszhu@semi.ac.cn
中文摘要a theory of scattering by charged dislocation lines in a quasitriangle potential well of alxga1-xn/gan heterostructures is developed. the dependence of mobility on carrier sheet density and dislocation density is obtained. the results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is given.
学科主题半导体材料
收录类别SCI
资助信息national science foundation of china 60506002 60776015the special funds for major state basic research project (973 program) of china 2006cb604907 863 high technology r&d program of china 2007aa03z402 2007aa03z451 this work was supported by national science foundation of china (grant nos. 60506002 and 60776015), the special funds for major state basic research project (973 program) of china (grant no. 2006cb604907), and the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z451).
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7291]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wei HY. Dislocation core effect scattering in a quasitriangle potential well[J]. applied physics letters,2009,94(11):art. no. 112102.
APA Wei HY.(2009).Dislocation core effect scattering in a quasitriangle potential well.applied physics letters,94(11),art. no. 112102.
MLA Wei HY."Dislocation core effect scattering in a quasitriangle potential well".applied physics letters 94.11(2009):art. no. 112102.

入库方式: OAI收割

来源:半导体研究所

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