Dislocation core effect scattering in a quasitriangle potential well
文献类型：期刊论文
| 作者 | Wei HY
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:11页码:art. no. 112102 |
| 关键词 | aluminium compounds carrier density carrier mobility dislocation density dislocation scattering gallium compounds III-V semiconductors semiconductor heterojunctions wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| 通讯作者 | xu xq chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: xlliu@red.semi.ac.cn ; qszhu@semi.ac.cn |
| 中文摘要 | a theory of scattering by charged dislocation lines in a quasitriangle potential well of alxga1-xn/gan heterostructures is developed. the dependence of mobility on carrier sheet density and dislocation density is obtained. the results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is given. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national science foundation of china 60506002 60776015the special funds for major state basic research project (973 program) of china 2006cb604907 863 high technology r&d program of china 2007aa03z402 2007aa03z451 this work was supported by national science foundation of china (grant nos. 60506002 and 60776015), the special funds for major state basic research project (973 program) of china (grant no. 2006cb604907), and the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z451). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7291]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei HY. Dislocation core effect scattering in a quasitriangle potential well[J]. applied physics letters,2009,94(11):art. no. 112102. |
| APA | Wei HY.(2009).Dislocation core effect scattering in a quasitriangle potential well.applied physics letters,94(11),art. no. 112102. |
| MLA | Wei HY."Dislocation core effect scattering in a quasitriangle potential well".applied physics letters 94.11(2009):art. no. 112102. |
入库方式： OAI收割
来源：半导体研究所
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