High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature
文献类型：期刊论文
| 作者 | Zhu H ; Liu J
|
| 刊名 | electronics letters
 |
| 出版日期 | 2009 |
| 卷号 | 45期号:6页码:329-330 |
| 关键词 | PHOTODIODE |
| ISSN号 | 0013-5194 |
| 通讯作者 | sun xm chinese acad sci state key lab microstruct & superlattices inst semicond pob 912 beijing 100083 peoples r china. e-mail address: hzzheng@semi.ac.cn |
| 中文摘要 | the characteristics of a resonant cavity-enhanced ingaas/gaas quantum-dot n-i-n photodiode with only a bottom distributed bragg reflector used as the cavity mirror, are reported. to suppress the dark current, an alas layer is inserted into the device structure as the blocking layer. it turns out that the structure still possesses the resonant coupling nature, and makes rabi splitting discernible in the photoluminescence spectra. the measured responsivity spectrum of the photocurrent shows a peak at lambda = 1030 nm, and increases rapidly as the bias voltage increases. a peak responsivity of 0.75 a/w, or equivalently an external quantum efficiency of 90.3%, is obtained at v-bias = -1.4 v. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china 2006cb932801 2007cb924903 2007cb924904 chinese academy of sciences kjcx.yw.w09 this work was in part supported by the national basic research program of china under no. 2006cb932801; 2007cb924903 and 2007cb924904, and also by the special research programs of the chinese academy of sciences and the knowledge innovation program project of chinese academy of sciences under no. kjcx.yw.w09. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7295]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu H,Liu J. High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature[J]. electronics letters,2009,45(6):329-330. |
| APA | Zhu H,&Liu J.(2009).High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature.electronics letters,45(6),329-330. |
| MLA | Zhu H,et al."High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature".electronics letters 45.6(2009):329-330. |
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来源：半导体研究所
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