Growth behavior of AlInGaN films
文献类型：期刊论文
| 作者 | Shang JZ ; Zhang BP ; Mao MH ; Cai LE ; Zhang JY ; Fang ZL ; Liu BL ; Yu JZ ; Wang QM ; Kusakabe K ; Ohkawa K |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2009 |
| 卷号 | 311期号:3页码:474-477 |
| 关键词 | Scanning electron microscope Strain X-ray diffraction AlInGaN |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang bp xiamen univ dept phys xiamen 361005 peoples r china. e-mail address: bzhang@xmu.edu.cn |
| 中文摘要 | the structural and surface properties of alingan quaternary films grown at different temperatures on gan templates by metalorganic chemical vapor deposition are investigated. formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. the surface is featured with v-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of alingan layers. the two-layer structure is interpreted by taking into account of the strain status in alingan layers. (c) 2008 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7309]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shang JZ,Zhang BP,Mao MH,et al. Growth behavior of AlInGaN films[J]. journal of crystal growth,2009,311(3):474-477. |
| APA | Shang JZ.,Zhang BP.,Mao MH.,Cai LE.,Zhang JY.,...&Ohkawa K.(2009).Growth behavior of AlInGaN films.journal of crystal growth,311(3),474-477. |
| MLA | Shang JZ,et al."Growth behavior of AlInGaN films".journal of crystal growth 311.3(2009):474-477. |
入库方式： OAI收割
来源：半导体研究所
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