Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer
文献类型：期刊论文
| 作者 | Zhang ML
|
| 刊名 | superlattices and microstructures
 |
| 出版日期 | 2009 |
| 卷号 | 45期号:2页码:54-59 |
| 关键词 | AlGaN/GaN heterostructure Superlattices (SLs) Root mean square roughness (RMS) Sheet resistance |
| ISSN号 | 0749-6036 |
| 通讯作者 | zhang ml chinese acad sci ctr mat sci inst semicond pob 912 beijing 100083 peoples r china. e-mail address: mlzhang@semi.ac.cn |
| 中文摘要 | algan/gan heterostructure using unintentionally doped aln/gan superlattices (sls) as barrier layer is grown on c-plane sapphire by metal organic vapor deposition (mocvd). compared with the conventional si-doped structure, electrical property is improved. an average sheet resistance of 287.1 omega/square and high resistance uniformity of 0.82% are obtained across the 2-inch epilayer wafer with an equivalent al composition of 38%. hall measurement shows that the mobility of two-dimensional electron gas (2deg) is 1852 cm(2)/v s with a sheet carrier density of 1.2 x 10(13) cm(-2) at room temperature. the root mean square roughness (rms) value is 0.159 nm with 5 x 5 mu m(2) scan area and the monolayer steps are clearly observed. the reason for the property improvement is discussed. (c) 2008 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7319]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang ML. Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer[J]. superlattices and microstructures,2009,45(2):54-59. |
| APA | Zhang ML.(2009).Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer.superlattices and microstructures,45(2),54-59. |
| MLA | Zhang ML."Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer".superlattices and microstructures 45.2(2009):54-59. |
入库方式： OAI收割
来源：半导体研究所
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