Decay lifetime and evolution of semiconductor quantum dots in photonic crystals
文献类型：期刊论文
| 作者 | Zhu ZY ; Li SS |
| 刊名 | superlattices and microstructures
 |
| 出版日期 | 2009 |
| 卷号 | 45期号:2页码:65-72 |
| 关键词 | Photonic crystal Decay lifetime Quantum dots Rabbi oscillation |
| ISSN号 | 0749-6036 |
| 通讯作者 | li ss chinese acad sci state key lab superlattices & microstruct inst semicond pob 912 beijing 100083 peoples r china. e-mail address: sslee@red.semi.ac.cn |
| 中文摘要 | spontaneous emission from gaas/algaas quantum dots (qds) embedded in photonic crystals with a narrow photonic band gap is studied theoretically. the results show that the decay lifetime is very sensitive to the sizes of qds, and both inhibited and accelerated emission can occur, which had been indicated in a previous experiment. the weisskopf-wigner approximation, good for atoms and molecules, may be incorrect for qds. a damped rabi oscillation of the excited state with the transition frequency outside the photonic band gap may appear, which is impossible for atoms and molecules. (c) 2008 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china g2009cb929300 national natural science foundation of china 6052 1001 60776061this work was supported by the national basic research program of china (973 program) grant no. g2009cb929300 and the national natural science foundation of china under grant nos. 6052 1001 and 60776061. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7321]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu ZY,Li SS. Decay lifetime and evolution of semiconductor quantum dots in photonic crystals[J]. superlattices and microstructures,2009,45(2):65-72. |
| APA | Zhu ZY,&Li SS.(2009).Decay lifetime and evolution of semiconductor quantum dots in photonic crystals.superlattices and microstructures,45(2),65-72. |
| MLA | Zhu ZY,et al."Decay lifetime and evolution of semiconductor quantum dots in photonic crystals".superlattices and microstructures 45.2(2009):65-72. |
入库方式： OAI收割
来源：半导体研究所
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