Energy Levels of Hydrogenic Impurities in InAs Quantum Ring
文献类型：期刊论文
| 作者 | Zheng WL ; Li ZW ; Wang XF |
| 刊名 | spectroscopy and spectral analysis
 |
| 出版日期 | 2009 |
| 卷号 | 29期号:3页码:607-610 |
| 关键词 | Effective mass Binding energies Perturbation method Quantum ring |
| ISSN号 | 1000-0593 |
| 通讯作者 | zheng wl chengde teachers coll nationalities dept phys chengde 067000 peoples r china. e-mail address: zhengwenliheda@126.com |
| 中文摘要 | the distribution of energy levels of the ground state and the low-lying excited states of hydrogenic impurities in inas quantum ring was investigated by applying the effective mass approximation and the perturbation method. in 2d polar coordinates, the exact solution to the schrodinger equation was used to calculate the perturbation integral in a parabolic confinement potential. the numerical results show that the energy levels of electron are sensitively dependent on the radius of the quantum ring and a minimum exists on account of the parabolic confinement potential. with decreasing the radius, the energy spacing between energy levels increases. the degenerate energy levels of the first excited state for hydrogenic impurities are not relieved, and when the degenerate energy levels are split and the energy spacing will increase with the increase in the radius. the energy spacing between energy levels of electron is also sensitively dependent on the angular frequency and will increase with the increases in it. the degenerate energy levels of the first excited state are not relieved. the degenerate energy levels of the second excited state are relieved partially. the change in angular frequency will have a profound effect upon the calculation of the energy levels of the ground state and the low-lying excited states of hydrogenic impurities in inas quantum ring. the conclusions of this paper will provide important guidance to investigating the optical transitions and spectral structures in quantum ring. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7323]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng WL,Li ZW,Wang XF. Energy Levels of Hydrogenic Impurities in InAs Quantum Ring[J]. spectroscopy and spectral analysis,2009,29(3):607-610. |
| APA | Zheng WL,Li ZW,&Wang XF.(2009).Energy Levels of Hydrogenic Impurities in InAs Quantum Ring.spectroscopy and spectral analysis,29(3),607-610. |
| MLA | Zheng WL,et al."Energy Levels of Hydrogenic Impurities in InAs Quantum Ring".spectroscopy and spectral analysis 29.3(2009):607-610. |
入库方式： OAI收割
来源：半导体研究所
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