Desorption and Ripening of Low Density InAs Quantum Dots
文献类型：期刊论文
| 作者 | Zhan F
|
| 刊名 | journal of nanoscience and nanotechnology
 |
| 出版日期 | 2009 |
| 卷号 | 9期号:2页码:844-847 |
| 关键词 | Quantum Dots Desorption Molecular Beam Epitaxy |
| ISSN号 | 1533-4880 |
| 通讯作者 | huang ss tsinghua univ dept elect engn state key lab integrated optoelect beijing 100084 peoples r china. |
| 中文摘要 | in this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (qds) suited for the study of single od properties without resorting to submicron lithography. experiment results demonstrate that inas desorption is significant during growing the low density qds. ripening of inas qds is clearly observed during the post-growth annealing. photoluminescence spectroscopy reveals that the emission wavelength of low density inas qds arrives at 1332.4 nm with a gaas capping layer. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7325]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhan F. Desorption and Ripening of Low Density InAs Quantum Dots[J]. journal of nanoscience and nanotechnology,2009,9(2):844-847. |
| APA | Zhan F.(2009).Desorption and Ripening of Low Density InAs Quantum Dots.journal of nanoscience and nanotechnology,9(2),844-847. |
| MLA | Zhan F."Desorption and Ripening of Low Density InAs Quantum Dots".journal of nanoscience and nanotechnology 9.2(2009):844-847. |
入库方式： OAI收割
来源：半导体研究所
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