中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells

文献类型:期刊论文

作者Hao YF ; Chen YH ; Liu Y ; Wang ZG
刊名epl
出版日期2009
卷号85期号:3页码:art. no. 37003
关键词INVERSION ASYMMETRY HETEROSTRUCTURES RASHBA LAYERS
ISSN号0295-5075
通讯作者hao yf chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: yhchen@semi.ac.cn
中文摘要by means of the transfer matrix technique, interface-induced rashba spin splitting of conduction subbands in al0.3ga0.7as/gaas/alxga1-xas/al0.3ga0.7as step quantum wells which contain internal structure inversion asymmetry introduced by the insertion of alxga1-xas step potential is investigated theoretically in the absence of electric field and magnetic field. the dependence of spin splitting on the well width, step width and al concentration is investigated in detail. we find that the sign of the first excited subband spin splitting changes with well width and step width, and is opposite to that of the ground subband under certain conditions. the sign and strength of the spin splitting are shown to be sensitive to the components of the envelope function at three interfaces. copyright (c) epla, 2009
学科主题半导体物理
收录类别SCI
资助信息973 program 2006cb921607 2006cb604908 national natural science foundation of china 60625402 this work was supported by the 973 program (2006cb921607, 2006cb604908) and the national natural science foundation of china (60625402).
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7339]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Hao YF,Chen YH,Liu Y,et al. Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells[J]. epl,2009,85(3):art. no. 37003.
APA Hao YF,Chen YH,Liu Y,&Wang ZG.(2009).Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells.epl,85(3),art. no. 37003.
MLA Hao YF,et al."Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells".epl 85.3(2009):art. no. 37003.

入库方式: OAI收割

来源:半导体研究所

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