Anisotropic Spin Splitting in Step Quantum Wells
文献类型：期刊论文
| 作者 | Hao GD
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:3页码:art. no. 037103 |
| 关键词 | RELAXATION ANISOTROPY INVERSION ASYMMETRY HETEROSTRUCTURES LAYERS |
| ISSN号 | 0256-307x |
| 通讯作者 | hao yf chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: yhchen@red.semi.ac.cn |
| 中文摘要 | by the method of finite difference, the anisotropic spin splitting of the alxga1-xas/gaas/alyga1-yas/alxga1-xas step quantum wells (qws) are theoretically investigated considering the interplay of the bulk inversion asymmetry and structure inversion asymmetry induced by step quantum well structure and external electric field. we demonstrate that the anisotropy of the total spin splitting can be controlled by the shape of the qws and the external electric field. the interface related rashba effect plays an important effect on the anisotropic spin splitting by influencing the magnitude of the spin splitting and the direction of electron spin. the rashba spin splitting presents in the step quantum wells due to the interface related rashba effect even without external electric field or magnetic field. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national basic research programme of china 2006cb921607 2006cb604908 national natural science foundation of china 60625402 supported by the national basic research programme of china under grant nos 2006cb921607 and 2006cb604908, and the national natural science foundation of china under grant no 60625402. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7341]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao GD. Anisotropic Spin Splitting in Step Quantum Wells[J]. chinese physics letters,2009,26(3):art. no. 037103. |
| APA | Hao GD.(2009).Anisotropic Spin Splitting in Step Quantum Wells.chinese physics letters,26(3),art. no. 037103. |
| MLA | Hao GD."Anisotropic Spin Splitting in Step Quantum Wells".chinese physics letters 26.3(2009):art. no. 037103. |
入库方式： OAI收割
来源：半导体研究所
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