Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition
文献类型:期刊论文
作者 | Tan HR![]() ![]() ![]() ![]() |
刊名 | surface & coatings technology
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出版日期 | 2009 |
卷号 | 203期号:10-11页码:1452-1456 |
关键词 | Cubic boron nitride Stress relaxation Ion beam assisted deposition Fourier transformed infrared spectroscopy |
ISSN号 | 0257-8972 |
通讯作者 | zhang xw chinese acad sci inst semicond key lab semicond mat sci beijing 100083 peoples r china. e-mail address: xwzhang@semi.ac.cn |
中文摘要 | cubic boron nitride (c-bn) films were prepared by ion beam assisted deposition (ibad) technique, and the stresses were primary estimated by measuring the frequency shifts in the infrared-absorption peaks of c-bn samples. to test the possible effects of other factors, dependencies of the c-bn transversal optical mode position on film thickness and c-bn content were investigated. several methods for reducing the stress of c-bn films including annealing, high temperature deposition, two-stage process, and the addition of a small amount of si were studied, in which the c-bn films with similar thickness and cubic phase content were used to evaluate the effects of the various stress relief methods. it was shown that all the methods can reduce the stress in c-bn films to various extents. especially, the incorporation of a small amount of si (2.3 at.%) can result in a remarkable stress relief from 8.4 to similar to 3.6 gpa whereas the c-bn content is nearly unaffected, although a slight degradation of the c-bn crystallinity is observed. the stress can be further reduced down below i gpa by combination of the addition of si with the two-stage deposition process. (c) 2008 elsevier b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
资助信息 | "863" project of china 2006aa03z306 national natural science foundation of china 50601025 this work was financially supported by the "863" project of china (2006aa03z306) and the national natural science foundation of china (50601025). |
语种 | 英语 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/7347] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Tan HR,Zhang XW,You JB,et al. Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition[J]. surface & coatings technology,2009,203(10-11):1452-1456. |
APA | Tan HR,Zhang XW,You JB,&Fan YM.(2009).Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition.surface & coatings technology,203(10-11),1452-1456. |
MLA | Tan HR,et al."Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition".surface & coatings technology 203.10-11(2009):1452-1456. |
入库方式: OAI收割
来源:半导体研究所
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