Temperature dependent spectral response characteristic of III-V compound tandem cell
文献类型：期刊论文
| 作者 | Wang Y
|
| 刊名 | chinese science bulletin
 |
| 出版日期 | 2009 |
| 卷号 | 54期号:3页码:353-357 |
| 关键词 | spectral response tandem cell temperature coefficient |
| ISSN号 | 1001-6538 |
| 通讯作者 | liu l chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: lliu@semi.ac.cn |
| 中文摘要 | the gainp/gaas/ge triple-junction tandem cells with a conversion efficiency of 27.1% were fabricated using metalorganic chemical vapor deposition (mocvd) technique. temperature dependence of the spectral response measurements of the gainp/gaas/ge tandem cell was performed by a quantum efficiency system at temperatures ranging from 25a degrees c to 160a degrees c. the red-shift phenomena of the absorption limit for all subcells were observed with increasing temperature, which is dued to the energy gap narrowing with temperature. the short-circuit current densities (j (sc)) of gainp, gaas and ge subcells at room temperature calculated based on the spectral response data were 12.9, 13.7 and 17 ma/cm(2), respectively. the temperature coefficient of j (sc) for the tandem cell was determined to be 8.9 mu a/(cm(2) center dot a degrees c), and the corresponding temperature coefficient of the open-circuit voltage deduced from the series-connected model was -6.27 mv/a degrees c. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7363]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Y. Temperature dependent spectral response characteristic of III-V compound tandem cell[J]. chinese science bulletin,2009,54(3):353-357. |
| APA | Wang Y.(2009).Temperature dependent spectral response characteristic of III-V compound tandem cell.chinese science bulletin,54(3),353-357. |
| MLA | Wang Y."Temperature dependent spectral response characteristic of III-V compound tandem cell".chinese science bulletin 54.3(2009):353-357. |
入库方式： OAI收割
来源：半导体研究所
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