借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响
文献类型：期刊论文
| 作者 | Zheng RK ; Habermeier Hu ; Chan HLW ; Choy CL ; 罗豪甦 |
| 刊名 | Physical Review B
 |
| 出版日期 | 2010-04-30 |
| 期号 | 81页码:104427-104435 |
| ISSN号 | 1098-0121 |
| 其他题名 | Effects of substrate-induced strain on transport properties of LaMnO3 and CaMnO3 thin films using ferroelectric poling and converse piezoelectric effect |
| 通讯作者 | 郑仁奎 |
| 中文摘要 | We have investigated the effects of the strain induced by ferroelectric poling or the converse piezoelectric effect on the transport properties of LaMnO3+ and CaMnO3 thin films grown on ferroelectric 0.67Pb Mg1/3Nb2/3 O3-0.33PbTiO3 single-crystal substrates. The ferroelectric poling of the substrate gives rise to a reduction in the in-plane tensile strain of the LaMnO3+ film, which results in a significant decrease in the resistance and increase in the insulator-to-metal transition temperature TP of the film. The ferroelectric poling also leads to opposite effects on the magnetoresistance MR below and above TP, namely, MR is reduced for T TP while MR is enhanced for T TP. These strain effects are explained in terms of coexisting phases whose volume fractions are modified as a result of the reduction in the Jahn-Teller JT distortion due to ferroelectric poling. An investigation of the effects of the strain induced by the converse piezoelectric effect on the resistance of the LaMnO3+ and CaMnO3 films shows that the resistance-strain coefficients R/R / cfilm /cfilm of the LaMnO3+ film is much larger than those of the CaMnO3 film. This result may imply that the strain-induced modification of the electronic bandwidth alone cannot account for the large R/R / cfilm /cfilm observed in the LaMnO3+ ilm, and highlights that the strong coupling of charge carriers to JT distortion is crucial for understanding the effects of the substrate-induced strain in manganite thin films. |
| 学科主题 | 材料科学 |
| 收录类别 | SCI收录 |
| 语种 | 英语 |
| 公开日期 | 2012-07-05 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/1187]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zheng RK,Habermeier Hu,Chan HLW,等. 借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响[J]. Physical Review B,2010(81):104427-104435. |
| APA | Zheng RK,Habermeier Hu,Chan HLW,Choy CL,&罗豪甦.(2010).借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响.Physical Review B(81),104427-104435. |
| MLA | Zheng RK,et al."借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响".Physical Review B .81(2010):104427-104435. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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