Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Wei HY ; Jiao CM; Song HP
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:5页码:art. no. 052101 |
| 关键词 | aluminium compounds conduction bands energy gap high electron mobility transistors III-V semiconductors magnesium compounds passivation semiconductor heterojunctions valence bands wide band gap semiconductors X-ray photoelectron spectra |
| ISSN号 | 0003-6951 |
| 通讯作者 | yang al chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: alyang@semi.ac.cn ; xlliu@semi.ac.cn |
| 中文摘要 | mgo is a promising gate dielectric and surface passivation film for gan/algan transistors, but little is known of the band offsets in the mgo/aln system. x-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (delta e-v) of mgo/aln heterostructures. a value of delta e-v=0.22 +/- 0.08 ev was obtained. given the experimental band gap of 7.83 ev for mgo, a type-i heterojunction with a conduction band offset of similar to 1.45 ev is found. the accurate determination of the valence and conduction band offsets is important for use of iii-n alloys based electronic devices. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | 863 high technology r&d program of china 2007aa03z402 2007aa03z451 special funds for major state basic research project (973 program) of china 2006cb604907 national science foundation of china 60506002 60776015this work was supported by the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z451), the special funds for major state basic research project (973 program) of china (grant no. 2006cb604907), and the national science foundation of china (grant nos. 60506002 and 60776015). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7369]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei HY,Jiao CM,Song HP. Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy[J]. applied physics letters,2009,94(5):art. no. 052101. |
| APA | Wei HY,Jiao CM,&Song HP.(2009).Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy.applied physics letters,94(5),art. no. 052101. |
| MLA | Wei HY,et al."Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy".applied physics letters 94.5(2009):art. no. 052101. |
入库方式： OAI收割
来源：半导体研究所
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