用于高频超声换能器的以硅片为基底的PMNT单晶厚膜
文献类型：期刊论文
| 作者 | Peng J ; Lau ST ; Chao C ; Dai JY ; Chan HLW ; 罗豪甦 ; Zhu BP ; Zhou QF ; Shung KK |
| 刊名 | Appl Phys A
 |
| 出版日期 | 2010-12-08 |
| 期号 | 98页码:233-237 |
| ISSN号 | 0947-8396 |
| 其他题名 | PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers |
| 通讯作者 | 彭珏 |
| 中文摘要 | In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and ？6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (kt ) and high piezoelectric constant (d33) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency. |
| 学科主题 | 材料科学 |
| 收录类别 | SCI收录 |
| 语种 | 英语 |
| 公开日期 | 2012-07-05 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/1193]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng J,Lau ST,Chao C,等. 用于高频超声换能器的以硅片为基底的PMNT单晶厚膜[J]. Appl Phys A,2010(98):233-237. |
| APA | Peng J.,Lau ST.,Chao C.,Dai JY.,Chan HLW.,...&Shung KK.(2010).用于高频超声换能器的以硅片为基底的PMNT单晶厚膜.Appl Phys A(98),233-237. |
| MLA | Peng J,et al."用于高频超声换能器的以硅片为基底的PMNT单晶厚膜".Appl Phys A .98(2010):233-237. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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