低温下磁性薄膜中铁电极化诱导的应变对量子关联电阻的影响
文献类型:期刊论文
作者 | Jia RR ; Zhang JC ; Zheng RK ; Deng DM ; Habermeier HU ; Chan HLW ; 罗豪甦 ; Cao SX |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2010-09-14 |
期号 | 82页码:104418-104422 |
ISSN号 | 1098-0121 |
其他题名 | Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films |
通讯作者 | J. C. Zhang |
中文摘要 | Based on the complexity and difficult understanding on low-temperature resistivity minimum in manganites,the effect of ferroelectric-poling-induced strain on Kondo-type transport behavior was systemically investigated as a function of magnetic field for La0.7Ca0.15Sr0.15MnO3 manganite thin films grown on ferroelectric 0.67Pb Mg1/3Nb2/3 O3-0.33PbTiO3 PMN-PT single-crystal substrates. The results show that the lowtemperature resistivity upturn is mainly caused from quantum correction effects driven by electron-electron interaction and inelastic scattering. Whether the PMN-PT substrate is in unpoled or poled state, the temperature where the resistivity shows an upturn near 15 K shifts to a higher temperature under magnetic field. The ferroelectric poling induces a reduction in the in-plane tensile strain and thus the lattice distortion of the film, which suppresses the resistivity upturn. These prove that the local lattice distortion relevant to the strain of the film is one of the main disorders that influence the resistivity upturn. The present results will be meaning to understand the physical mechanism of Kondo-type behavior at low temperature in colossal magnetoresistance manganites |
学科主题 | 材料科学 |
收录类别 | SCI收录 |
语种 | 英语 |
公开日期 | 2012-07-05 |
源URL | [http://ir.sic.ac.cn/handle/331005/1207] ![]() |
专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
推荐引用方式 GB/T 7714 | Jia RR,Zhang JC,Zheng RK,等. 低温下磁性薄膜中铁电极化诱导的应变对量子关联电阻的影响[J]. PHYSICAL REVIEW B,2010(82):104418-104422. |
APA | Jia RR.,Zhang JC.,Zheng RK.,Deng DM.,Habermeier HU.,...&Cao SX.(2010).低温下磁性薄膜中铁电极化诱导的应变对量子关联电阻的影响.PHYSICAL REVIEW B(82),104418-104422. |
MLA | Jia RR,et al."低温下磁性薄膜中铁电极化诱导的应变对量子关联电阻的影响".PHYSICAL REVIEW B .82(2010):104418-104422. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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