Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy
文献类型：期刊论文
| 作者 | Wang HL ; Wu DH ; Wu BP ; Ni HQ ; Huang SS ; Xiong YH ; Wang PF ; Han Q ; Niu ZC ; Tangring I ; Wang SM |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:1页码:art. no. 014214 |
| 关键词 | THRESHOLD CURRENT-DENSITY |
| ISSN号 | 0256-307x |
| 通讯作者 | wang hl chinese acad sci inst semicond state key lab superlattice & microstruct beijing 10008 peoples r china. e-mail address: hlwang_19841220@163.com |
| 中文摘要 | we report a 1.5-mu m ingaas/gaas quantum well laser diode grown by molecular beam epitaxy on ingaas metamorphic buffers. at 150 k, for a 1500 x 10 mu m(2) ridge waveguide laser, the lasing wavelength is centred at 1.508 mu m and the threshold current density is 667 a/cm(2) under pulsed operation. the pulsed lasers can operate up to 286 k. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60607016 60625405national basic research programme of china national high technology research and development programme of china supported partly by the national natural science foundation of china under grand nos 60607016 and 60625405, the national basic research programme of china and the national high technology research and development programme of china. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7385]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HL,Wu DH,Wu BP,et al. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy[J]. chinese physics letters,2009,26(1):art. no. 014214. |
| APA | Wang HL.,Wu DH.,Wu BP.,Ni HQ.,Huang SS.,...&Wang SM.(2009).Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy.chinese physics letters,26(1),art. no. 014214. |
| MLA | Wang HL,et al."Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy".chinese physics letters 26.1(2009):art. no. 014214. |
入库方式： OAI收割
来源：半导体研究所
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