Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
文献类型：期刊论文
| 作者 | Xu YQ ; Tang B
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:1页码:art. no. 018101 |
| 关键词 | SURFACE-MORPHOLOGY GROWTH SUPERLATTICES HETEROSTRUCTURES TEMPERATURE DETECTORS GAAS(100) FILMS INAS INSB |
| ISSN号 | 0256-307x |
| 通讯作者 | zhou zq chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. e-mail address: yingqxu@semi.ac.cn |
| 中文摘要 | we investigate the molecular beam epitaxy growth of gasb films on gaas substrates using alsb buffer layers. optimization of alsb growth parameter is aimed at obtaining high gasb crystal quality and smooth gasb surface. the optimized growth temperature and thickness of alsb layers are found to be 450 degrees c and 2.1 nm, respectively. a rms surface roughness of 0.67 nm over 10 x 10 mu m(2) is achieved as a 0.5 mu m gasb film is grown under optimized conditions. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60607016 60625405national basic research programme of china national high technology research and development programme of china supported by the national natural science foundation of china under grant nos 60607016 and 60625405, the national basic research programme of china, and the national high technology research and development programme of china. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7391]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ,Tang B. Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers[J]. chinese physics letters,2009,26(1):art. no. 018101. |
| APA | Xu YQ,&Tang B.(2009).Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers.chinese physics letters,26(1),art. no. 018101. |
| MLA | Xu YQ,et al."Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers".chinese physics letters 26.1(2009):art. no. 018101. |
入库方式： OAI收割
来源：半导体研究所
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