Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | science in china series e-technological sciences
 |
| 出版日期 | 2009 |
| 卷号 | 52期号:1页码:23-27 |
| 关键词 | InAs/GaSb superlattice substrates infrared detector |
| ISSN号 | 1006-9321 |
| 通讯作者 | guo j nw polytech univ sch mat xian 610000 peoples r china. e-mail address: jieggg1020@sina.com |
| 中文摘要 | type ii superlattices (sls) short period inas(4ml)/gasb(8ml) were grown by molecular-beam epitaxy on lattice-mismatched gaas substrates and on gasb substrates. a smooth gasb epilayer was formed on gaas substrates by inserting mulit-buffer layers including an interfacial misfit mode alsb quantum dot layer and alsb/gasb superlattices smooth layer. sls grown on gaas substrates (gaas-based sls) showed well-resolved satellite peaks in xrd. gasb-based sls with better structural quality and smoother surface showed strong photoluminescence at 2.55 mu m with a full width at half maximum (fwhm) of 20 mev, narrower than 31 mev of gaas-based sls. inferior optical absorption of gaas-based sl was observed in the range of 2-3 mu m. photoresponse of gasb-based sls showed the cut-off wavelength at 2.6 mu m. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60607016 60625405national basic research program of china 2007cb936304 supported by the the national natural science foundation of china (grant nos. 60607016,60625405) and the national basic research program of china (grant no. 2007cb936304) |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7409]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates[J]. science in china series e-technological sciences,2009,52(1):23-27. |
| APA | Xu YQ.(2009).Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates.science in china series e-technological sciences,52(1),23-27. |
| MLA | Xu YQ."Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates".science in china series e-technological sciences 52.1(2009):23-27. |
入库方式： OAI收割
来源：半导体研究所
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