Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires
文献类型：期刊论文
| 作者 | Li JB
|
| 刊名 | physical review b
 |
| 出版日期 | 2008 |
| 卷号 | 78期号:19页码:art. no. 193301 |
| 关键词 | density functional theory energy gap enthalpy gallium compounds ground states III-V semiconductors indium compounds Monte Carlo methods nanowires semiconductor quantum wires wide band gap semiconductors |
| ISSN号 | 1098-0121 |
| 通讯作者 | xiang hj natl renewable energy lab golden co 80401 usa. e-mail address: suhuai_wei@nrel.gov ; jbli@semi.ac.cn |
| 中文摘要 | the alloy formation enthalpy and band structure of ingan nanowires were studied by a combined approach of the valence-force field model, monte carlo simulation, and density-functional theory (dft). for both random and ground-state structures of the coherent ingan alloy, the nanowire configuration was found to be more favorable for the strain relaxation than the bulk alloy. we proposed an analytical formula for computing the band gap of any ingan nanowires based on the results from the screened exchange hybrid dft calculations, which in turn reveals a better band-gap tunability in ternary ingan nanowires than the bulk alloy. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | u.s. department of energy de-ac36-99go10337 chinese academy of sciences work at nrel was supported by the u.s. department of energy under contract no. de-ac36-99go10337. we thank g. kresse for providing us the vasp 5.1 code. j.l. gratefully acknowledges financial support from the "one-hundred talents plan" of the chinese academy of sciences. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7411]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li JB. Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires[J]. physical review b,2008,78(19):art. no. 193301. |
| APA | Li JB.(2008).Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires.physical review b,78(19),art. no. 193301. |
| MLA | Li JB."Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires".physical review b 78.19(2008):art. no. 193301. |
入库方式： OAI收割
来源：半导体研究所
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