Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths
文献类型：期刊论文
| 作者 | Zhang Y ; Zhang Y
|
| 刊名 | chinese physics b
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:12页码:4645-4647 |
| 关键词 | resonant tunnelling diode molecular beam epitaxy |
| ISSN号 | 1674-1056 |
| 通讯作者 | zhang y beijing technol & business univ internship ctr business & law beijing 102488 peoples r china. e-mail address: rtdhemt@hotmail.com |
| 中文摘要 | this paper studies the dependence of i - v characteristics on quantum well widths in alas/in0.53ga0.47as and alas/in0.53ga0.47as/inas resonant tunnelling structures grown on inp substrates. it shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. the measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunnelling diodes are continually decreasing with increasing well width. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7421]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang Y,Zhang Y. Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths[J]. chinese physics b,2008,17(12):4645-4647. |
| APA | Zhang Y,&Zhang Y.(2008).Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths.chinese physics b,17(12),4645-4647. |
| MLA | Zhang Y,et al."Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths".chinese physics b 17.12(2008):4645-4647. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。