Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As
文献类型：期刊论文
| 作者 | Gan HD
|
| 刊名 | ieee transactions on magnetics
 |
| 出版日期 | 2008 |
| 卷号 | 44期号:11页码:2692-2695 |
| 关键词 | Magnetic analysis magnetic semiconductors molecular-beam epitaxial growth |
| ISSN号 | 0018-9464 |
| 通讯作者 | zhao jh chinese acad sci inst semicond state key lab superlattices & microstruct beijing 100083 peoples r china. e-mail address: jhzhao@red.semi.ac.cn |
| 中文摘要 | we report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (ga, cr)as films. the crystalline quality and magnetic properties are sensitive to the growth conditions. the single-phase (ga, cr)as film with the curie temperature of 10 k is synthesized at growth temperature t-s = 250 degrees c and with nominal cr content x = 0.016. however, for the films with x > 0.02, the aggregation of cr atoms is strongly enhanced as both t. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. the origin of room-temperature ferromagnetism in (ga, cr)as films with nanoclusters is also discussed. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7433]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gan HD. Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As[J]. ieee transactions on magnetics,2008,44(11):2692-2695. |
| APA | Gan HD.(2008).Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As.ieee transactions on magnetics,44(11),2692-2695. |
| MLA | Gan HD."Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As".ieee transactions on magnetics 44.11(2008):2692-2695. |
入库方式： OAI收割
来源：半导体研究所
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