Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures
文献类型：期刊论文
| 作者 | Yang T
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2008 |
| 卷号 | 310期号:24页码:5469-5472 |
| 关键词 | Metalorganic chemical vapor deposition Quantum dots InAs GaAs Laser diodes |
| ISSN号 | 0022-0248 |
| 通讯作者 | yang t chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. e-mail address: tyang@semi.ac.cn |
| 中文摘要 | we report on optimizing the gaas capping layer growth of 1.3 mu m inas quantum dots (qds) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. the initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees c, which is the same for the growth of both the qds and a 5-nm-thick in0.15ga0.85as strain-reducing capping layer on the qds, while the remaining part is grown at a higher temperature of 560 degrees c after a rapid temperature rise and subsequent annealing period at this temperature. the capping layer is deposited at the low temperatures (<= 560 degrees c) to avoid postgrowth annealing effect that can blueshift the emission wavelength of the qds. we demonstrate the existence of an optimum t (=5 nm) and a critical annealing time (>= 450s) during the capping, resulting in significantly enhanced photoluminescence from the qds. this significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. the technique reported here has important implications for realizing stacked 1.3 mu m inas/gaas qd lasers. (c) 2008 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7441]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang T. Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures[J]. journal of crystal growth,2008,310(24):5469-5472. |
| APA | Yang T.(2008).Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures.journal of crystal growth,310(24),5469-5472. |
| MLA | Yang T."Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures".journal of crystal growth 310.24(2008):5469-5472. |
入库方式： OAI收割
来源：半导体研究所
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