Effect of beta-irradiation on photoluminescence of MOCVD grown GaN
文献类型：期刊论文
| 作者 | Majid A ; Israr M ; Zhu JJ ; Ali A |
| 刊名 | journal of materials science-materials in electronics
 |
| 出版日期 | 2009 |
| 卷号 | 20期号:1页码:14-16 |
| 关键词 | ELECTRON-IRRADIATION GALLIUM NITRIDE THIN-FILMS |
| ISSN号 | 0957-4522 |
| 通讯作者 | ali a quaid i azam univ dept phys adv mat phys lab islamabad pakistan. |
| 中文摘要 | the effect of beta particles interaction on the optical properties of mocvd grown gan is reported. a significant change in luminescence properties of gan is observed after exposing the material with 0.6 mev beta particles with low dose of 10(12) cm(-2). the results obtained from photoluminescence measurements of irradiated gan samples in low dose are found contradictory to those reported in literature for samples irradiated with heavy dose (> 10(15) cm(-2)) of electron. an increase in intensity of yellow luminescence has been observed with increasing dose of beta particles which is in disagreement to the already reported results in literature for heavily irradiated samples. a model has been proposed to sort out this inconsistency. the increase in yl intensity at low dose is attributed to the increase in concentration of vgaon complex whereas production of non-radiative vgaon clusters is assumed to justify the decrease in yl intensity at high dose. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | higher education commission of pakistan national natural science foundation of china 60506001 6047602160576003higher education commission of pakistan and national natural science foundation of china (grant no. 60506001, no. 60476021 and no. 60576003) provide partial financial support to execute this project. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7445]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Majid A,Israr M,Zhu JJ,et al. Effect of beta-irradiation on photoluminescence of MOCVD grown GaN[J]. journal of materials science-materials in electronics,2009,20(1):14-16. |
| APA | Majid A,Israr M,Zhu JJ,&Ali A.(2009).Effect of beta-irradiation on photoluminescence of MOCVD grown GaN.journal of materials science-materials in electronics,20(1),14-16. |
| MLA | Majid A,et al."Effect of beta-irradiation on photoluminescence of MOCVD grown GaN".journal of materials science-materials in electronics 20.1(2009):14-16. |
入库方式： OAI收割
来源：半导体研究所
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