Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers
文献类型：期刊论文
| 作者 | Yang T ; Cao YL; Ma WQ
|
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2008 |
| 卷号 | 20期号:21-24页码:1860-1862 |
| 关键词 | Characteristics temperature p-doped quantum-dot (QD) laser saturation modal gain |
| ISSN号 | 1041-1135 |
| 通讯作者 | cao yl chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. e-mail address: tyang@semi.ac.cn |
| 中文摘要 | we have fabricated 1.3-mu m inas-gaas quantum-dot (qd) lasers with and without p-type modulation doping and their characteristics have been investigated. we find that introducing p-type doping in active regions can improve the temperature stability of 1.3-mu m inas-gaas qd lasers, but it does not, increase the saturation modal gain of the qd lasers. the saturation modal gain obtained from the two types of lasers is identical (17.5 cm(-1)). moreover, the characteristic temperature increases as cavity length increases for the two types of lasers, and it improves more significantly for the lasers with p-type doping due to their higher gain. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | ministry of science and technology of china 2006aa03z401 national science foundation of china 60776043 60706008this work was supported in part by the ministry of science and technology of china (2006aa03z401) and in part by the national science foundation of china (grant 60776043 and grant 60706008). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7449]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang T,Cao YL,Ma WQ. Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers[J]. ieee photonics technology letters,2008,20(21-24):1860-1862. |
| APA | Yang T,Cao YL,&Ma WQ.(2008).Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers.ieee photonics technology letters,20(21-24),1860-1862. |
| MLA | Yang T,et al."Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers".ieee photonics technology letters 20.21-24(2008):1860-1862. |
入库方式： OAI收割
来源：半导体研究所
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