Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates
文献类型：期刊论文
| 作者 | Gao HY ; Yan FW ; Zhang Y ; Li JM ; Zeng YP ; Wang JX |
| 刊名 | applied surface science
 |
| 出版日期 | 2009 |
| 卷号 | 255期号:6页码:3664-3668 |
| 关键词 | GaN Nonpolar MOCVD Nano-patterned |
| ISSN号 | 0169-4332 |
| 通讯作者 | gao hy chinese acad sci inst semicond semicond lighting res & dev ctr beijing 100083 peoples r china. e-mail address: hygao2005@yahoo.com |
| 中文摘要 | sapphire substrates were nano-patterned by inductive coupled plasma etching process. nonpolar a-plane gan films were grown on planar and nano-patterned r-plane sapphire substrates by metal organic chemical vapor deposition. the anisotropic characteristic and the crystalline quality of the a-plane gan films were studied through xrd rocking curves. the cross section and surface morphologies of the a-plane gan films were studied using sem and afm measurements, respectively. the crystal quality and surface flatness of the nonpolar a-plane gan were greatly improved through the usage of the nano-patterned r-plane sapphire substrates. (c) 2008 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7453]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao HY,Yan FW,Zhang Y,et al. Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates[J]. applied surface science,2009,255(6):3664-3668. |
| APA | Gao HY,Yan FW,Zhang Y,Li JM,Zeng YP,&Wang JX.(2009).Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates.applied surface science,255(6),3664-3668. |
| MLA | Gao HY,et al."Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates".applied surface science 255.6(2009):3664-3668. |
入库方式： OAI收割
来源：半导体研究所
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